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ResiScope™ III
Advanced Electrical Measurements
ResiScope™ III is a cutting-edge module for Atomic Force Microscopy (AFM) that enables high-precision electrical measurements offering capabilities that extend beyond traditional Scanning Spreading Resistance Microscopy (SSRM) in measuring resistance and current over an exceptionally wide range, making it an indispensable tool for nanoscale electrical characterization.
Key Features
New Capabilities of ResiScope™ III
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Superior accuracy and reduced background noise (Noise floor: < 30 fA RMS)
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Simultaneous PFM + ResiScope measurements
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Full integration with NanoSolution software
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Access to all new future features and updates
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Enhanced compatibility with advanced AFM modes
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Resistance Range: 10² to 10¹² Ω
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Current Range: 50 fA to 1 mA
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Advanced auto-ranging capabilities
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Real-time current protection system
Comparison:
ResiScope III & C-AFM
ResiScope
Conductive AFM
Comparative Analysis of ResiScope and C-AFM Imaging in Polymer Battery Characterization (80 µm)
ResiScope Analysis
Looking at the ResiScope image (left), we observe distinct domain segregation in the polymer battery sample. The domains exhibit two clear conductivity regimes:
1. High-conductivity domains (red circular regions) displaying current responses in the microampere (µA) range
2. Insulating/low-conductivity domains (blue-orange regions) showing currents in the picoampere (pA) range (1-70 pA)
This clear bimodal distribution indicates well-defined phase separation in the material structure. The high spatial resolution and wide dynamic range, spanning several orders of magnitude in conductivity, enable unambiguous identification of these domains—a crucial factor for understanding the material's electrical properties and morphology.
C-AFM Drawbacks
The C-AFM image (right) reveals three distinct types of artifacts stemming from surface charging and capacitive effects, which compromise domain differentiation reliability. Cross-sectional analysis of both images highlights these limitations:
1. Current Saturation: The highly conductive domains show saturation at 10 nA (the amplifier's maximum current), resulting in measured conductivity values approximately two orders of magnitude lower than actual values.
2. Capacitive Interference: Capacitive effects prevent accurate measurement of small insulating domains adjacent to highly conductive regions.
3. Surface Charging Effects: The absence of protective resistance options in standard C-AFM leads to observable surface charging along the scan direction (left to right), manifesting as a negative tilt in the cross-sectional profile.
Organic Solar Cell Layers
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ResiScope image of epitaxially growth VO2. Image shows domains with different levels of conductivity. This domains corresponds with a network of fracture lines that crisscross the film along well-defined crystallographic directions.
Renewable Energy
Current image on Perovskite Solar Cell obtained with the ResiScope III with an applied bias of 1 volt. Image shows an homogeneous distribution of the current all over the grains (between 220-300 nA - blue/yellow areas) except for the grain boundaries where the current shows a significant increase (500 nA - red areas). This might be an effect of contact area increase due to the high roughness of the topography.
We observe distinct domain segregation in the polymer battery sample. The domains exhibit two clear conductivity regimes: 1. High-conductivity domains displaying current responses in the microampere (µA) range 2. Insulating/low-conductivity domains showing currents in the picoampere (pA) range (1-70 pA)
This image shows a current image on a P3HT/PMMA solar cell made with Soft ResiScope (10x10 microns). The inset shows the corresponding topography image with no apparent damage due to the lack of friction. Domains of 250-400 nm are visible, however it is difficult to address which domains correspond to P3HT and PMMA.
Semiconductors
ResiScope image of epitaxially growth VO2. Image shows domains with different levels of conductivity. This domains corresponds with a network of fracture lines that crisscross the film along well-defined crystallographic directions.
The current scan of the SRAM device reveals distinct current distribution: Active transistor regions show measurable current flow Metal interconnects display higher conductivity zones The potential contrast between memory cell regions helps identify functional areas Current mapping highlights the electrical pathways within the memory architecture
This example of a measurement on a cross-section of a silicon substrate with regions increasing levels of carrier implants (staircase type). It shows the topography of the sample where polishing vertical lines are visible. On the middle and bottom images the resistance map and its cross-section profile respectively. Each region has a size of 500 nm (lateral size) and it shows a decrease of the resistance (from right to left) regions ranging from 100 ohms to 1 Mohm.
